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DKDP Pockels Cell BBO Pockels Cell

BBO Pockels Cell

BBO is well-known for its excellent optical quality and low strain birefringence, which results in high extinction ratios and low wavefront distortion. With high quality BBO crystals, series QSB Transverse Electrode (TE) BBO Pockels cells (200nm to 1064nm) are ideal for high speed and high average power switching. It has the following merits

•Extinction ratio: >2000:1
•Wavefront Distortion: <λ/10 @ 632.6nm
•Capacitance: ≈2pF
•Transmittance: >98.5%
•Damage threshold: >850MW/cm2
•Resonance free operation.
•No thermal blooming
•No piezoelectric ringing under 300KHz
•No photo-refractive damage
•Protective fused-silica AR-coated windows
•Oxidized Aluminium housing as heat-sink, protecting Q-switch from static.
•No migration of the electrodes over a long time of use.
•All hermetical structure
•No encapsulants or no cements inside the device
QSB Series Nominal Specifications

Model

QSB-3320A

QSB-4425

QSB-5530

Material

BBO

Aperture (mm)

Φ2.9

Φ2.9

Φ3.8

Φ4.8

λ/4 Voltage (KV) @1064nm

3.1

3.2

3.4

Extinction ratio

>1000:1

>1000:1

>1000:1

Insertion Loss

<2%

<2%

<3%

Wavefront distortion

<λ/10

<λ/10

<λ/10

Capacitance (pF)

≈2pF

≈2pF

≈2pF

Peak optical power density capability

850MW/cm2 for pulses <10ns;
10GW/ cm2 for pulses <100ps.

Typical risetime(ps)

<300

<300

<300

Spectra range (nm)

200-2000

200-2000

200-2000

Physical dimension

Φ30x50mm

Φ30x52mm

¦Φ30x52mm

Φ30x60mm

 

Introduction

It has been well-known that excellent optical quality BBO is one of ideal electro-optic materials for high average power application. On basis of its significant advantages over all of E-O materials in terms of temperature stability, no thermal blooming, no photo-refractive damage and high damage threshold as well as high optical quality (high extinction ratio), BBO Pockels cell has been used widely in DPL systems with high average power, high repetition and short pulse (ns) compared to A-O Q-switch.

BBO spectra range is 190-3300nm. QSB series BBO Pockels cell Q-switch transmittance is greater than 98% over 300-2000nm, The capacitance of BBO Pockels cell Q-switches is much small, about 2pF, so its switching time is much fast, about <300ps. Intrinsic extinction ratio of high quality BBO is greater than 2000:1, measured at 633nm, wavefront distortion is <λ/8 at 633nm.

Temperature stability of BBO Pockels cell is much high in comparison to KD*P and LiNbO3 Pockels cell Q-switch, accordingly, there is no thermal blooming inside it.

For BBO Pockels cell, there is almost no pizeoelectrical ringing in operation from single shot to repetition rates of more than 300KHz.
Its Quarter-wave voltage is proportional to the ratio of width between electrodes to overall crystal length, so the crystal width decrease and its length increase minish the quarter-wave voltage.

BBO crystal is slightly hygroscopic, so BBO Pockels cell is of all hermetical structure, its two ends have protective two fused-silica windows coated AR-coating.

Besides its good surface treatment (no naked-eye mechanical scratches on housing surface), the housing of QSB series BBO Pockels cell Q-switch is of oxidized aluminium, acting as heat-sink, also protecting Pockels cell Q-switch from static damage while its operation safety is considered absolutely.

Matching the housing heat-sink, its core mounting BBO crystal is ceram with properties of HV-resistance and good heat-sink.
In its assembly, no encapsulants or no cements are used, which makes it sure that there is no pollution in operation of laser system.

All in all, all designes are much scientific and industrial, no POM or PTFE (polymer plastic) is used. It is well known that the utilization of POM and PTFE which is used generally as the housing of Pockels cell Q-switch or modulators, causing a large amount of "migration" of the electrodes over a long time of use.

Application
BBO Pockels cell should be used with λ/4  polarization plate and loaded with λ/4 voltage。Inside Q-switch, BBO axis arrangement is shown in the following figure,BBO Z-axis(optical-axis)and Y-axis are parallel to the device central line and electrode central line, respectively. So the laser light and its polarization are adjusted accordingly.

 
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BBO Q switch can be driven by rise HV voltage and fall HV voltage. If it’s driven under the mode of rise HV voltage. we should use λ / 4 waveplate in the optical path. If under the mode of fall HV voltage, we don’t. The following pictures show the two types separately:
 
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 PIC.1: The optical path under the mode of fall HV voltage
 
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PIC.2:The optical path under the mode of rise HV voltage
Note
1. The maximum voltage loaded on the device should be less than 5KV;
2. The device should be used in appropriately clean, dust-free environment;
3. The device should be used against strong impinging;
4. The device should not be disassembled because of its all-sealed structure

 

 
 
 
 
 
 
 
 

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